(T- and Photo-NIL, T- and UV-NIL)
In this NIL technology, a thin film is firstly prepared onto a substrate by applying e.g. spin-coating. The resulting resist film is solid at first. Then, a stamp is pressed with low pressure into the liquid resist film at slightly elevated temperatures (T-NIL step). Due to the annealing the resist becomes flowable. After complete filling of the stamp cavities the resist is then solidified by means of a photo-induced chemical curing reaction at the elevated temperature (Photo-NIL step). Subsequently the stamp can be removed from the solidified NIL resist without a cooling step (isothermal imprint). In most cases, the imprinted structures are finally transferred by subsequent plasma etching steps into the substrate.