Resists & Photopolymers

ma-N 1400 series

Negative Photoresists

PVD & Lift-off

ma-N 1400 - Negative Tone Photoresist Series

for Conventional Pattern Transfer and Single-Layer Lift-Off Processes

Unique Features

Resists available in a variety of viscosities
Aqueous alkaline development
Tunable pattern profile: vertical to undercut
High wet and dry etch resistance
Good thermal stability of the resist pattern
Easy to remove

Applications

Microelectronics and micro systems technology
Mask for lift-off processes
Etch mask for semiconductors and metals
Well suitable for implantation
Mould for electroplating

Resist	Film Thickness [µm] spin coating @ 3000 rpm	Spectral Sensitivity	Special Feature
ma-N 1405	0.5	300 - 410nm i-line - 365 nm (h-line - 405 nm)	Novolak based resist, thermal stability up to 160°C for metal evaporation and sputtering
ma-N 1407	0.7
ma-N 1410	1.0
ma-N 1420	2.0
ma-N 1440	4.0
ma-N 402	0.2	300 - 380nm i-line - 365 nm	Novolak based resist, thermal stability up to 110°C for metal evaporation
ma-N 405	0.5
ma-N 415	1.5
ma-N 420	2.0
ma-N 440	4.1
ma-N 490	7.5

Recommended process chemicals:

for ma-N 1400 Series
Thinner: ma-T 1046
Developer: ma-D 533/S (TMAH based)
Remover: mr-Rem 700 (NMP & NEP free), mr-Rem 500 (NMP free), ma-R 404/S (strongly alkaline)
Lift-off: mr-Rem 700 (NMP & NEP free), mr-Rem 500 (NMP free)

for ma-N 400 Series
Thinner: ma-T 1049
Developer: ma-D 331/S, ma-D 332/S (NaOH based), 531/S, ma-D 532/S (TMAH based)
Remover: mr-Rem 700 (NMP & NEP free), mr-Rem 500 (NMP free), ma-R 404/S (strongly alkaline)
Lift-off: mr-Rem 700 (NMP & NEP free), mr-Rem 500 (NMP free)

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ma-N 400 series

Negative Photoresists

PVD & Lift-off

ma-N 400 - Negative Tone Photoresist Series

for Conventional Pattern Transfer and Single-Layer Lift-Off Processes

Unique Features

Resists available in a variety of viscosities
Aqueous alkaline development
Tunable pattern profile: vertical to undercut
High wet and dry etch resistance
Good thermal stability of the resist pattern
Easy to remove

Application

Microelectronics and micro systems technology
Mask for lift-off processes
Etch mask for semiconductors and metals
Well suitable for implantation
Mould for electroplating

Resist	Film Thickness [µm] spin coating @ 3000 rpm	Spectral Sensitivity	Special Feature
ma-N 402	0.2	300 - 380nm i-line - 365 nm	Novolak based resist, thermal stability up to 110°C for metal evaporation
ma-N 405	0.5
ma-N 415	1.5
ma-N 420	2.0
ma-N 440	4.1
ma-N 490	7.5

ma-N 1405	0.5	300 - 410nm i-line - 365 nm (h-line - 405 nm)	Novolak based resist, thermal stability up to 160°C for metal evaporation and sputtering
ma-N 1407	0.7
ma-N 1410	1.0
ma-N 1420	2.0
ma-N 1440	4.0

Recommended process chemicals:

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ma-N 2400 series

Negative Photoresists

Dry etch mask

ma-N 2400 - Negative Tone Photoresist Series

E-Beam and Deep UV sensitive

Unique Features ma-N 2400 series for e-beam and deep UV lithography

Resists available in a variety of viscosities
Aqueous alkaline development
Excellent pattern resolution - down to 30 nm
High wet and dry etch resistance
Good thermal stability
Easy to remove

Applications

Manufacturing of semiconductor devices
Use in micro- and nanoelectronics
Mask for etching, e.g. Si, SiO2, Si3N4 or metals
Mask for ion implantation
Stamp fabrication for NIL

Resist	Film Thickness [µm] Spin Coating @ 3000 rpm	Sensitivity	Special Feature
ma-N 2401	0.1	E-beam Deep UV: 248nm / 254nm	novolak based resist, high wet and dry etch resistance
ma-N 2403	0.3
ma-N 2405	0.5
ma-N 2410	1.0

Recommended process chemicals:

Thinner: ma-T 1090
Developer: ma-D 525 (TMAH based), ma-D 331, ma-D 332 (NaOH based)
Remover: mr-Rem 700 (NMP & NEP free), mr-Rem 500 (NMP free), ma-R 404/S (strongly alkaline)

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mr-DWL series

Negative Photoresists

Mastering / micro-optics

mr-DWL - Negative Tone Photoresist Series

For Direct Laser Writing (DLW) @ 405 nm & Two Photon Polymerization (2PP)

Unique Features

Specifically designed for exposure wavelengths above 400 nm
Suitable for DLW (e.g. @ 405 nm) & 2PP
High sensitivity
Excellent thermal and chemical stability
High wet and dry etch stability

Applications

Fast and contactless prototyping by DLW & 2PP
Etch mask for wet and dry etch processes
Mould for electroplating
Mould for stamp fabrication by thermal or UV moulding
Optical applications in micro systems technology

Resist	Thickness range [µm] Spin Coating @ 1000 - 6000 rpm	Spectral Sensitivity	Special Feature
mr-DWL 5	3 - 15	350 nm - 410 nm i-line/ h-line	designed for patterning by direct laser writing (DLW & 2PP), high dry and wet etch resistance for non & permanent optical application
mr-DWL 40	10 - 100
mr-DWL 100	20 - 150

Recommended process chemicals:

Thinner: no thinner available
Developer: mr-Dev 600 (solvent based)
Remover: mr-Rem 700 (NMP & NEP free), mr-Rem 500 (NMP free), O2-Plasma

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EpoCore & EpoClad series

Negative Photoresists

Waveguides

EpoCore & EpoClad - Negative Tone Photoresist Series

For manufacture of optical single mode (SM) & multi mode (MM) polymer waveguides

Unique Features

Standard UV lithography & PCB technology processing
UV patterning of core and cladding
High transmittance @ 850 nm
High heat (> 230 °C) and pressure resistance
Tunable refractive index (core/ cladding)

Applications

Optical SM & MM polymer waveguides
Biosensors (multifunctional systems)
Microfluidics

Resist	Thickness range [µm] spin coating @ 3000 rpm	Spectral Sensitivity	Special Feature of manufactured waveguide
EpoCore 2	2	i-line - 365nm	Refractive index @ 830 nm: EpoCore: 1.58, EpoClad: 1.57, low shrinkage, high thermal stability up to 230°C, low optical loss ̴0.2dB/cm @ 850nm
EpoCore 5	5
EpoCore 10	10
EpoCore 20	20
EpoCore 50	50 (@ 1.500 rpm)

EpoClad 2	2
EpoClad 5	5
EpoClad 10	10
EpoClad 20	20
EpoClad 50	50 (@ 1.700 rpm)

Recommended process chemicals:

Thinner: no thinner available
Developer: mr-Dev 600 (solvent based)
Remover: mr-Rem 700 (NMP & NEP free), mr-Rem 500 (NMP free), O2-plasma

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mr-EBL 6000 series

Negative Photoresists

Dry etch mask

mr-EBL 6000 - Negative Tone Resist Series

High E-beam sensitivity

Unique features

E-beam sensitivity:
- 2 - 5 μC/cm2 @ 10 keV
- 4 - 6 μC/cm2 @ 20 keV
- 20 - 40 μC/cm2 @ 50 keV
Post exposure bake (PEB) necessary
Development in organic solvents
Excellent thermal stability of the resist patterns
High wet and dry etch resistance
Resolution capability: 80 nm

Use in micro- and nanoelectronics
Manufacturing of semiconductor devices
Mask for etching, e.g. of Si, SiO2, Si3N4 or metals
Generation of stamps with nanopatterns

Resist	Film Thickness [µm] Spin Coating @ 3000 rpm	Sensitivity	Special Feature
mr-EBL 6000.1	0.1	E-beam	excellent thermal stability, high wet and dry etch resistance
mr-EBL 6000.3	0.3
mr-EBL 6000.5	0.5

Recommended process chemicals:

Thinner: ma-T 1045
Developer: mr-Dev 600 (solvent based)
Remover: mr-Rem 700 (NMP & NEP free), mr-Rem 500 (NMP free), O2-Plasma

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ma-P 1200G series

Positive Photoresists

Etch mask, electroplating mould

Photoresist series for greyscale lithography

ma-P 1200G is a positive tone photoresist series specifically designed for the requirements of greyscale lithography. Standard binary lithography is also possible.

Unique Features

Reduced contrast
Film thickness up to 60 µm and higher
50-60 µm depth range of the patterns possible in greyscale lithography
Spectral sensitivity 350…450 nm
High intensity laser exposure possible without outgassing
Aqueous alkaline development, for greyscale lithography with TMAH based developers, for standard binary lithography also with metal ion bearing developers
Suitable for electroplating
Suitable for dry etch processes e.g. with CHF3, CF4, SF6
Suitable for pattern reflow after standard binary lithography

Applications

Use of manufactured 3D patterns in micro-optics, MEMS and MOEMS, displays
Pattern transfer by
- UV moulding
- Etching
- Electroplating

Resist	Film Thickness [µm] spin coating @ 3000 rpm	Spectral Sensitivity	Special Feature
ma-P 1215G	1.5	350 - 450nm i-line - 365 nm h-line - 405 nm g-line - 436 nm	"For grey scale lithography of up to 80 µm thick films Suitable for standard binary lithography High stability in plating baths High etch resistance"
ma-P 1225G	2.5
ma-P 1275G	9.5 (up to 60 µm at lower spin speeds with single-coating)

Recommended process chemicals:

Thinner: ma-T 1050
Developer: ma-D 532/S, mr-D 526/S (TMAH based) for greyscale lithography, ma-D 331 (NaOH based) for standard lithography
Remover: mr-Rem 700 (NMP & NEP free), mr-Rem 500 (NMP free), ma-R 404/S (strongly alkaline)

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ma-P 1200 series / ma-P 1275HV

Positive Photoresists

Etch mask, electroplating mould

Positive Photoresist Series and Thick Film Photoresists for UV lithography

ma-P 1200 series and ma-P 1275 & ma-P 1275HV for microsystems technology and microelectronics

Unique Features

Film thickness up to 60 μm in one spin-coating step
Broadband-, g- and i-line exposure
High stability in acid and alkaline plating baths
High dry and wet etch resistance
Good thermal stability of the resist patterns attainable
Aqueous alkaline development
Side wall angle up to 87° with mask aligner broadband exposure
Suitable for pattern reflow

Applications

Etch mask - metals and semiconductors
Mould for electroplating
Fabrication of micro optical components, e.g. micro lenses by pattern transfer from reflowed resist patterns
Mask for ion implantation

Resist	Film Thickness [µm] spin coating @ 3000 rpm	Spectral Sensitivity	Special Feature
ma-P 1205	0.5	350 - 450nm i-line - 365 nm h-line - 405 nm g-line - 436 nm	For standard binary lithography of 0.3 - 50 µm thick films High stability in plating baths High etch resistance
ma-P 1210	1.0
ma-P 1215	1.5
ma-P 1225	2.5
ma-P 1240	4.0
ma-P 1275	7.5 (up to 40 µm at lower spin speeds)
ma-P 1275HV	11 (up to 50 µm at lower spin speeds)

Recommended process chemicals:

Thinner: ma-T 1050
Developer: mr-D 526/S (TMAH based), ma-D 331 (NaOH based)
Remover: mr-Rem 700 (NMP & NEP free), mr-Rem 500 (NMP free), ma-R 404/S (strongly alkaline)

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mr-P 1200LIL series

Positive Photoresists

Dry etch mask

Photoresist series for UV lithography

mr-P 1200LIL is a series of thin positive tone photoresists for high resolution applications. It is excellently suited for laserinterference lithography (LIL).

Unique Features

100…500 nm film thickness
Sensitive to 350…450 nm exposure
Steep sidewalls due to high contrast enable high quality etched patterns
Aqueous alkaline development
Etch resistant

Applications

Masking of substrate surfaces during fabrication of steep-edged nano structures for diffractive optics:

Laminary gratings
VLS gratings

Resist	Film Thickness [µm] spin coating @ 3000 rpm	Spectral Sensitivity	Special Feature
mr-P 1201LIL	0.1	330 - 450nm i-line - 365 nm h-line - 405 nm g-line - 463nm	For fabrication of steep-edged nano structures with laser interference lithography
mr-P 1202LIL	0.2

Resist

Film Thickness [µm]
spin coating @ 3000 rpm

Spectral Sensitivity

Special Feature

mr-P 1201LIL

0.1

330 - 450nm

i-line - 365 nm

h-line - 405 nm

g-line - 463nm

For fabrication of steep-edged nano structures with laser interference lithography

mr-P 1202LIL

0.2

Recommended process chemicals:

Thinner: ma-T 1050
Developer: ma-D 374/S (metal ion bearing, silicate/phosphate based)
Remover: mr-Rem 700 (NMP & NEP free), mr-Rem 500 (NMP free), ma-R 404/S (strongly alkaline)

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OrmoComp®

Hybrid Polymers

Nano- and micro optics

For UV imprint and UV mouldling

OrmoComp® offers glass-like material properties after UV curing and is the standard product for a broad range of pattern sizes and component dimensions

Unique Features

Highly transparent for near UV and VIS down to 350 nm
High thermal and mechanical stability

Applications

Moulded gratings and prisms
Micro lenses and micro lens arrays
Optical couplers and connectors
Microfluidic systems
Single elements or wafer scale

Material	Refractive Index (589 nm)	Viscosity [Pas]	Preferred processing	Typical end use application	Replication with PDMS molds (no oxygen sensitivity)
OrmoComp^®	1.520	2.0 ± 0.5	UV imprint UV molding	Nano- and micro optics	+
Alternative Hybrid Polymer materials
OrmoClear^®FX	1.555	1.5 ± 0.3	UV imprint and UV molding	Nano- and micro optics	+
OrmoClear^®	1.555	2.9 ± 0.3	UV imprint and UV molding	Nano- and micro optics	-
OrmoClear^®30	1.561	30 ± 3	UV imprint and UV molding	Micro optics	-
OrmoStamp^®	1.516	0.4 ± 0.2	UV imprint and UV molding	Working stamp fabrication	+
OrmoStamp^®FF	1.516	0.5 ± 0.1	UV imprint and UV molding	Working stamp fabrication	+
OrmoClad	1.537	2.5 ± 1.0	UV imprint UV molding UV lithography	Waveguides	-
OrmoCore	1.555	2.9 ± 0.4	UV imprint UV molding UV lithography	Waveguides	-

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OrmoStamp®

Hybrid Polymers

Working stamp fabrication

For UV-based and thermal imprinting

OrmoStamp® offers glass-like properties after UV curing and was designed for the fabrication of transparent polymer working stamps with excellent pattern fidelity

Unique Features

Highly transparent for near UV and visible light
High thermal and mechanical stability
Enhanced anti-adhesive properties for low release forces
Processing with standard lithography equipment

Applications

Transparent working stamp fabrication
Cost efficient alternative to quartz stamps
UV-based and thermal imprinting, nanoimprint lithography

Material	Refractive Index (589 nm)	Viscosity [Pas]	Preferred processing	Typical end use application	Replication with PDMS molds (no oxygen sensitivity)
OrmoStamp^®	1.516	0.4 ± 0.2	UV imprint and UV molding	Working stamp fabrication	+
OrmoStamp^®FF	1.516	0.5 ± 0.1	UV imprint and UV molding	Working stamp fabrication	+
Alternative Hybrid Polymer materials
OrmoComp^®	1.520	2.0 ± 0.5	UV imprint UV molding	Nano- and micro optics	+
OrmoClear^®FX	1.555	1.5 ± 0.3	UV imprint and UV molding	Nano- and micro optics	+
OrmoClear^®	1.555	2.9 ± 0.3	UV imprint and UV molding	Nano- and micro optics	-
OrmoClear^®30	1.561	30 ± 3	UV imprint and UV molding	Micro optics	-
OrmoClad	1.537	2.5 ± 1.0	UV imprint UV molding UV lithography	Waveguides	-
OrmoCore	1.555	2.9 ± 0.4	UV imprint UV molding UV lithography	Waveguides	-

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OrmoStamp®FF

Hybrid Polymers

Working stamp fabrication

For UV-based and thermal imprinting

OrmoStamp®FF offers glass-like properties after UV curing and was designed for the fabrication of transparent polymer working stamps with excellent pattern fidelity OrmoStamp®FF is the fluorine-free advancement of the tried and tested OrmoStamp® and will replace this material. In order to achieve maximum transparency, a further flood exposure with up to 20 J/cm-2 can be carried out after the separation of the master and OrmoStamp®FF copy, depending on the layer thickness

Unique Features

Highly transparent for near UV and visible light
High thermal and mechanical stability
Enhanced anti-adhesive properties for low release forces
Processing with standard lithography equipment
PFAS free
To further improve demolding, the application of an anti-adhesion layer is recommended (e.g. by vapor deposition of F13-TCS (1H,1H,2H,2H-prfluorooctyl-trichlorosilane, CAS number [78560-45-9]

Transparent working stamp fabrication
Cost efficient alternative to quartz stamps
UV-based and thermal imprinting, nanoimprint lithography

Material	Refractive Index (589 nm)	Viscosity [Pas]	Preferred processing	Typical end use application	Replication with PDMS molds (no oxygen sensitivity)
OrmoStamp^®FF	1.516	0.5 ± 0.1	UV imprint and UV molding	Working stamp fabrication	+
OrmoStamp^®	1.516	0.4 ± 0.2	UV imprint and UV molding	Working stamp fabrication	+
Alternative Hybrid Polymer materials
OrmoComp^®	1.520	2.0 ± 0.5	UV imprint UV molding	Nano- and micro optics	+
OrmoClear^®FX	1.555	1.5 ± 0.3	UV imprint and UV molding	Nano- and micro optics	+
OrmoClear^®	1.555	2.9 ± 0.3	UV imprint and UV molding	Nano- and micro optics	-
OrmoClear^®30	1.561	30 ± 3	UV imprint and UV molding	Micro optics	-
OrmoClad	1.537	2.5 ± 1.0	UV imprint UV molding UV lithography	Waveguides	-
OrmoCore	1.555	2.9 ± 0.4	UV imprint UV molding UV lithography	Waveguides	-

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OrmoClear® series

Hybrid Polymers

Micro optics

For UV imprint and UV mouldling

The OrmoClear® series offers glass-like material properties after UV curing and due to its very low volume shrinkage during UV exposure it is suitable for components of dimensions > 100 µm

Unique Features

Highly transparent for near UV and VIS down to 350 nm
High thermal and mechanical stability

Applications

Moulded gratings and prisms
Micro lenses and micro lens arrays
Optical couplers and connectors
Microfluidic systems
Single elements or wafer scale

Material	Refractive Index (589 nm)	Viscosity [Pas]	Preferred processing	Typical end use application	Replication with PDMS molds (no oxygen sensitivity)
OrmoClear^®	1.555	2.9 ± 0.3	UV imprint and UV molding	Micro optics	-
OrmoClear^®30	1.561	30 ± 3	UV imprint and UV molding	Micro optics	-
Alternative Hybrid Polymer materials
OrmoComp^®	1.520	2.0 ± 0.5	UV imprint UV molding	Nano- and micro optics	+
OrmoClear^®FX	1.555	1.5 ± 0.3	UV imprint and UV molding	Nano- and micro optics	+
OrmoStamp^®	1.516	0.4 ± 0.2	UV imprint and UV molding	Working stamp fabrication	+
OrmoStamp^®FF	1.516	0.5 ± 0.1	UV imprint and UV molding	Working stamp fabrication	+
OrmoClad	1.537	2.5 ± 1.0	UV imprint UV molding UV lithography	Waveguides	-
OrmoCore	1.555	2.9 ± 0.4	UV imprint UV molding UV lithography	Waveguides	-

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OrmoClear®FX

Hybrid Polymers

Nano- and micro optics

For UV imprint and UV moulding

OrmoClear®FX offers glass-like material properties after UV curing. It is optimized for micro- and nanooptical components of different pattern sizes and dimensions.

Unique Features

Highly transparent for near UV and VIS down to 350 nm
High thermal and mechanical stability

Applications

Moulded gratings and prisms
Micro lenses and micro lens arrays
Optical couplers and connectors
Microfluidic systems
Single elements or wafer scale

Material	Refractive Index (589 nm)	Viscosity [Pas]	Preferred processing	Typical end use application	Replication with PDMS molds (no oxygen sensitivity)
OrmoClear^®FX	1.555	1.5 ± 0.3	UV imprint and UV molding	Nano- and micro optics	+
Alternative Hybrid Polymer materials
OrmoComp^®	1.520	2.0 ± 0.5	UV imprint UV molding	Nano- and micro optics	+
OrmoClear^®	1.555	2.9 ± 0.3	UV imprint and UV molding	Nano- and micro optics	-
OrmoClear^®30	1.561	30 ± 3	UV imprint and UV molding	Micro optics	-
OrmoStamp^®	1.516	0.4 ± 0.2	UV imprint and UV molding	Working stamp fabrication	+
OrmoStamp^®FF	1.516	0.5 ± 0.1	UV imprint and UV molding	Working stamp fabrication	+
OrmoClad	1.537	2.5 ± 1.0	UV imprint UV molding UV lithography	Waveguides	-
OrmoCore	1.555	2.9 ± 0.4	UV imprint UV molding UV lithography	Waveguides	-

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OrmoCore and OrmoClad

Hybrid Polymers

Waveguides

For UV imprint, UV moulding, and UV lithography

OrmoCore and OrmoClad offer glass-like material properties after UV curing and are due to their low optcal loss particulary suitable for optical waveguide fabrication

Unique Features

Low optical loss at datacom wavelengths
Tunable refractive index (Core/Clad ratios)
High thermal and mechanical stability

Applications

Single-mode and multi-mode waveguides
Beam splitters
Thermo-optical switches
Microring resonators

Material	Refractive Index (589 nm)	Viscosity [Pas]	Preferred processing	Typical end use application	Replication with PDMS molds (no oxygen sensitivity)
OrmoClad	1.537	2.5 ± 1.0	UV imprint UV molding UV lithography	Waveguides	-
OrmoCore	1.555	2.9 ± 0.4	UV imprint UV molding UV lithography	Waveguides	-
Alternative Hybrid Polymer materials
OrmoComp^®	1.520	2.0 ± 0.5	UV imprint UV molding	Nano- and micro optics	+
OrmoClear^®FX	1.555	1.5 ± 0.3	UV imprint and UV molding	Nano- and micro optics	+
OrmoClear^®	1.555	2.9 ± 0.3	UV imprint and UV molding	Nano- and micro optics	-
OrmoClear^®30	1.561	30 ± 3	UV imprint and UV molding	Micro optics	-
OrmoStamp^®	1.516	0.4 ± 0.2	UV imprint and UV molding	Working stamp fabrication	+
OrmoStamp^®FF	1.516	0.5 ± 0.1	UV imprint and UV molding	Working stamp fabrication	+

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mr-NIL200 series

Nanoimprint Resists

Dry etch mask

Photo-curable NIL resist

mr-NIL200 is a photo-curable NIL resist specifically for applying hard and non-permeable stamp materials. The typical application field of mr-NIL200 is the use as an etch mask in pattern transfer processes for e.g. photonic applications. mr-NIL200 works without the need for any additional adhesion promoter or primer.

Unique Features

No need for additional adhesion promoter or primer proved on different substrates (Si, SiO₂, Al, sapphire, Cu, different underlayer materials like LOR, UL1, UL3)
Can be cured under ambient conditions in the presence of air
Low viscosity renders fast cavitity filling and minimize propensity for air bubble defects

Application Examples

Step-and-repeat nanoimprint on pre-spin coated film for the fabrication of integrated optical devices
G Calafiore et al., J. Micro/Nanolith. MEMS MOEMS 14(3), 033506 Link to Abstract

Efficient fabrication of photonic and optical patterns by imprinting the tailored photo-curable NIL resist «mr-NIL200»
M Messerschmidt et al., Poster, International Conference on Micro & Nano Engineering MNE2018, Copenhagen Link to Poster

UV-NIL

Resist	Film Thickness [nm] spin coating @ 3000 rpm	Recommended working stamp material	Special Feature
mr-NIL200-100nm	100	non-porous	No primer required, r.t. process
mr-NIL200-200nm	200
mr-NIL200-300nm	300

Film thickness and packages size

Specifications	Film thickness and packages sizes
Ready to use solutions for standard film thickness (3000 rpm)	mr-NIL200-100 nm mr-NIL200-200 nm mr-NIL200-300 nm
Customized film thickness upon request between (3000 rpm)	1 µm
Availalbe resist quantities	250 ml 500 ml Larger volumes on request

Recommended process chemicals:

Thinner: mr-T 1078
Primer: Not needed
(mr-APS1 for mr-NIL200 film thickness > 300nm)
Omnicoat (Kayaku Advanced Materials)

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mr-NIL210 series

Nanoimprint Resists

Dry etch mask

Photo-curable NIL-Resist

mr-NIL210 is a purely organic, photo-curable NIL resist with oustanding dry etch characteristics. It features an excellent curing and nanoimprint performance and is particularly suitable for soft-NIL using soft stamp materials, e.g. PDMS.

Unique Features

Excellent curing properties, even under air (presence of oxygen)
Compatibility to PDMS working stamps for soft-NIL, preferably applied in combination with UV-PDMS KER-4690
Outstanding dry etch stability against various substrates like silicon, quartz, or aluminum
Purely organic resist, residue-free removable with oxygen plasma possible after curing

Applications

Etch mask for pattern transfer processes (dry and wet etching)
Fabrication of nanostructures for
- LEDs, photonic crystals
- Patterned sapphire substrates (PSS)
- Microelectronics
- Organic electronics (OLED, OPV, OTFT)
- Data storage (bit patterned media)
- Lift-off applications in combination with e.g. LOR (MCC, USA)

UV-NIL

Resist	Film Thickness [nm] spin coating @ 3000 rpm	Recommended working stamp material	Special Feature
mr-NIL210-100nm	100	porous soft stamp (e.g. PDMS)	Excellent film stability, r.t. process
mr-NIL210-200nm	200
mr-NIL210-500nm	500

Our standard film thicknesses

mr-NIL210 Version	Film thickness @3000 rpm*
mr-NIL210-100nm	100 nm
mr-NIL210-200nm	200 nm
mr-NIL210-500nm	500 nm

* Customized film thickness available on request up to 12.5 µm

Recommended process chemicals:

Thinner: mr-T 1078
Primer: mr-APS1, Omnicoat (Kayaku Advanced Materials)

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mr-NIL212FC series

Nanoimprint Resists

Dry etch mask

Photo-curable NIL-Resist

mr-NIL212FC is a purely organic, photo-curable NIL resist with oustanding dry etch characteristics. It features an excellent curing and nanoimprint performance and is particularly suitable for soft-NIL using soft stamp materials, e.g. PDMS. mr-NIL212FC features a strongly increased etching stability in RIE processes compared to mr-NIL210.

Unique Features

Excellent structure stability due to the integrated FC-technology (fast curing) for sub-100nm-structures
Perfect curing characteristics in combination with low power light exposure sources (e.g. standard mask aligners)
Compatibility to PDMS working stamps for soft-NIL, preferably applied in combination with UV-PDMS KER-4690
Provides superior etching selectivity compared to mr-NIL210 in RIE processes
Purely organic resist, residue-free removable with oxygen plasma possible after curing

Etch mask for pattern transfer processes (dry and wet etching)
Fabrication of nanostructures for
- LEDs, photonic crystals
- Patterned sapphire substrates (PSS)
- Microelectronics
- Organic electronics (OLED, OPV, OTFT)
- Data storage (bit patterned media)
- Lift-off applications in combination with e.g. LOR (KAM, USA)

UV-NIL

Resist	Film Thickness [nm] spin coating @ 3000 rpm	Recommended working stamp material	Special Feature
mr-NIL212FC-100nm	100	porous soft stamp (e.g. PDMS)	Excellent film stability, r.t. process
mr-NIL212FC-200nm	200
mr-NIL212FC-300nm	300

Our standard film thicknesses

mr-NIL212FC version	Film thickness @3000 rpm*
mr-NIL212FC-100nm	100 nm
mr-NIL212FC-200nm	200 nm
mr-NIL212FC-300nm	300 nm

* Customized film thickness available upon request

Recommended process chemicals:

Thinner: ma-T 1050

Primer: mr-APS1, OmniCoat (Kayaku Advanced Materials)

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mr-XNIL26SF

Nanoimprint Resists

Dry etch mask

Photo-curable NIL resist, solvent-free

Photo-curable NIL resist featuring high content of fluorinated components

Unique Features

high content of fluorinated components for easy stamp release and low defectivity
100% organic, easy strippable with oxygen plasma
Can be diluted to 100nm film thickness using PGMEA or ma-T 1050
Low refractive index of cured material (RI = 1.40)

Applications

NIL applications where comparably low release forces are essential (e.g. imprints on top of a multilayer stack)

UV-NIL

Resist	Film Thickness [nm] spin coating @ 3000 rpm	Recommended working stamp material	Special Feature
mr-XNIL26SF	4.8	non-porous	High fluorine content, low release forces, r.t. process, low RI, solvent-free

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mr-I T85 series

Nanoimprint Resists

Bio-Applications, Lab-on-Chip

Non-polar thermoplastic NIL Resist

T-NIL resist (Tg = 85 °C) based on non-polar cyclo-olefin-copolymers (TOPAS)

Unique Features

Film thickness of up to 5 µm possible for the fabrication of microfluidic or lab-on-chip devices
100% organic thermoplast → dry etching and stripping possible with pure oxygen plasma
featuring the highest optical transparency in the range of UV/vis and distinctive chemical stability against e.g. different solvents, acids, and bases

Applications

Lab-on-chip systems

Bio applications
Microfluidics
Microoptical elements
Wave guides
Single and multilayer systems
Mask for pattern transfer processes

T-NIL

Resist	Film Thickness [nm] spin coating @ 3000 rpm	GGlass transition temperature Tg [°C]	Special Feature
mr-I T85-0.3	300	85	high chemical and optical stability, high transparency
mr-I T85-1.0	1000
mr-I T85-5.0	5000

Material characteristics and imprint parameters	mr-I T85
Glass transition temperature T_g	85 °C
Imprint temperature	130 – 150 °C
PImprint pressure	5 – 20 bar
Ready-to-use solutions for various film thicknesses (3000 rpm) *	mr-I T85-0.3 300 nm mr-I T85-1.0 1.0 µm mr-I T85-5.0 5.0 µm
Resist removal	Oxygen plasma