Element 2
+49 30 641 670 100
Element 1
info@microresist.de

Product selection

Filter by category, process, application etc.!

chemicals category
chemicals supplier
chemicals characteristics
chemicals usage
chemicals fitting products

Ancillaries

ma-D 331
Developer
micro resist technology
Element 25weqwf

Apllication

aqueous-alkaline based developer for photoresists

Characteristics

- aqueous-alkaline NaOH based developer for photoresist series: ma-P 1200, ma-P 1200 G (binary standard lithography) & ma-N 2400

- Puddle, immersion and spray development

Suitable Resists:

Clear
ma-D 331/S
Developer
micro resist technology
Element 25weqwf

Apllication

aqueous-alkaline based & surfactant containing developer for photoresists

Characteristics

- aqueous-alkaline & surfactant containing NaOH based developer for photoresist series: ma-P 1200 & ma-N 400

- Puddle, immersion and spray development

Suitable Resists:

Clear
ma-D 332
Developer
micro resist technology
Element 25weqwf

Apllication

aqueous-alkaline based developer for photoresists

Characteristics

- aqueous-alkaline NaOH based developer for photoresist series: ma-N 2400

- Puddle, immersion and spray development

Suitable Resists:

Clear
ma-D 332/S
Developer
micro resist technology
Element 25weqwf

Apllication

aqueous-alkaline based & surfactant containing developer for photoresists

Characteristics

- aqueous-alkaline, surfactant containing NaOH based developer for photoresist series: ma-N 400

- Puddle, immersion and spray development

Suitable Resists:

Clear
mr-D 374/S
Developer
micro resist technology
Element 25weqwf

Apllication

aqueous-alkaline based & surfactant containing developer for photoresists

Characteristics

- aqueous-alkaline, surfactant containing metasilicate based developer for photoresist series: ma-P 1200 LIL

- Puddle, immersion and spray development

Suitable Resists:

Clear
ma-D 377
Developer
micro resist technology
Element 25weqwf

Apllication

aqueous-alkaline based developer for photoresists

Characteristics

- aqueous-alkaline, metasilicate based developer for photoresist series: ma-P 1200, ma-P 1200 G, ma-N 2400, ma-N 400

- on Al and Al containing substrates

- Puddle, immersion and spray development

Suitable Resists:

Clear
ma-D 525
Developer
micro resist technology
Element 25weqwf

Apllication

aqueous-alkaline based developer for photoresists

Characteristics

- aqueous-alkaline TMAH based developer for photoresist series: ma-N 2400

- Puddle, immersion and spray development

Suitable Resists:

Clear
ma-D 531/S
Developer
micro resist technology
Element 25weqwf

Apllication

aqueous-alkaline based & surfactant containing developer for photoresists

Characteristics

- aqueous-alkaline & surfactant containing TMAH based developer for photoresist series: ma-N 400

- Puddle, immersion and spray development

Suitable Resists:

Clear
ma-D 532/S
Developer
micro resist technology
Element 25weqwf

Apllication

aqueous-alkaline based & surfactant containing developer for photoresists

Characteristics

- aqueous-alkaline & surfactant containing TMAH based developer for photoresist series: ma-P 1200 G & ma-N 400

- Puddle, immersion and spray development

Suitable Resists:

Clear
ma-D 533/S
Developer
micro resist technology
Element 25weqwf

Apllication

aqueous-alkaline based & surfactant containing developer for photoresists

Characteristics

- aqueous-alkaline & surfactant containing TMAH based developer for photoresist series: ma-N 1400

- Puddle, immersion and spray development

Suitable Resists:

Clear
mr-D 526/S
Developer
micro resist technology
Element 25weqwf

Apllication

aqueous-alkaline based & surfactant containing developer for photoresists

Characteristics

- aqueous-alkaline & surfactant containing TMAH based developer for photoresist series: ma-P 1200 & ma-P 1200 G

- Puddle, immersion and spray development

Suitable Resists:

Clear
mr-D 4000/75
Developer
micro resist technology
Element 25weqwf

Apllication

aqueous-alkaline based developer for dry film photoresists

Characteristics

- aqueous-alkaline, K2CO3 based developer for DuPont dry film photoresists: MX 5000, MX 5000C

- Spray development

Suitable Resists:

Clear
mr-D 4000/100
Developer
micro resist technology
Element 25weqwf

Apllication

aqueous-alkaline based developer for dry film photoresists

Characteristics

- aqueous-alkaline, K2CO3 based developer for DuPont dry film photoresists: WBR 2000

- Spray development

Suitable Resists:

Clear
mr-Dev 600
Developer
micro resist technology
Element 25weqwf

Apllication

Solvent based developer for epoxy resin based photoresists 

Characteristics

- organic solvent based developer for photoresist series: EpoCore, EpoClad, mr-DWL, mr-EBL 6000, mr-UVL 6000, SU-8, SU-8 2000, SU-8 3000, SU-8 TF 6000, SUEX dry films

- Puddle, immersion and spray development

Suitable Resists:

Clear
mr-DevCH
Developer
micro resist technology
Element 25weqwf

Apllication

Solvent based developer for dry film photoresists

Characteristics

- organic solvent based developer for ADEX dry film photoresists

- Puddle, immersion and spray development

Suitable Resists:

Clear
OrmoDev
Developer
micro resist technology
Element 25weqwf

Apllication

Developer for hybrid polymers

Characteristics

- Colorless developer based on organic solvent mixture

- Removal of uncured hybrid polymer material (e.g. after mask lithography was applied)

- Immersion development 

Suitable Resists:

Clear
mr-Rem 500
Remover
micro resist technology
Element 25weqwf

Apllication

Solvent based remover for photoresists

Characteristics

- Organic solvent based remover for photoresist series: ma-P 1200, ma-P 1200 G, ma-P 1200 LIL, ma-N 2400, ma-N 400, ma-N 1400, mr-PL, PMMA, LOR, PMGI  

- NMP free, NEP containing

- Puddle, immersion and spray development

Suitable Resists:

Clear
mr-Rem 700
Remover
micro resist technology
Element 25weqwf

Apllication

Solvent based remover for photoresists

Characteristics

- Organic solvent based remover for photoresist series: ma-P 1200, ma-P 1200 G, ma-P 1200 LIL, ma-N 2400, ma-N 400, ma-N 1400, mr-PL, EpoCore, EpoClad, mr-DWL, mr-EBL 6000, mr-UVL 6000, SU-8, SU-8 2000, SU-8 3000, SU-8 TF 6000, PMMA, LOR, PMGI  

- NMP & NEP free, DMSO basiert, pH ~ 8

- Puddle, immersion and spray development

Suitable Resists:

Clear
ma-R 404/S
Remover
micro resist technology
Element 25weqwf

Apllication

Strongly alkaline, aqueous based remover for photoresists

Characteristics

- strongly alkaline, aqueous NaOH based remover for photoresist series: ma-P 1200, ma-P 1200 G, ma-P 1200 LIL, ma-N 2400, ma-N 400, ma-N 1400, mr-PL   

- Puddle, immersion and spray development

Suitable Resists:

Clear
HMDS-Primer
Adhesion Promoter
micro resist technology
Element 25weqwf

Apllication

Adhesion promoter for photoresists

Characteristics

- HMDS adhesion promoter on Si, SiO2, and glass substrates

- for photoresist series: ma-N 400, ma-N 1400, ma-P 1200, and ma-P 1200 G

Suitable Resists:

Clear

If necessary, please also use the general contact on our website – we will get back to you as soon as possible!

Element 32
0

Resist Alliance

micro resist technology is a single entry point for specialty chemicals used in micro and nano manufacturing in Europe. The portfolio of in-house products is complemented by the strategic sales of associated products that are manufactured by our international partners. Here we act as a high-service distributor and offer European medium-sized companies a wide range of complementary products from a single source, which can be used for both established and innovative production and manufacturing processes.

DuPont Electronic Solutions (formerly DOW Electronic Materials / Rohm and Haas Europe Trading ApS)

We offer products for semiconductor technologies, advanced packaging and dry film resists from our partner DuPont, with whom we have been working for more than 20 years.

Kayaku Advanced Materials, Inc. (formerly MicroChem Corp.)

We offer photoresists and specialty chemicals for MEMS and microelectronic applications from our partner Kayaku Advanced Materials, with whom we have been working for more than 20 years.

DJ MicroLaminates, Inc.

We offer dry film resists for MEMS, microfluidics and packaging applications from our partner DJ MicroLaminates, with whom we have been cooperating for over two years.

Dry Films

Dry films are ready-to-use polymer films as laminate foil with a high accuracy of the film thickness and excellent adhesion behaviour on various substrates. They are very simple in handling, photo-structurable and both as cut sheets and as roll material available.

  • Available in different film thicknesses
  • UV-crosslinking as negative photoresist
  • Feasibility of high aspect ratios
  • Vertical sidewalls
  • Multi lamination possible – up to 6 layer  complex multi-layer designs
  • High chemical resilience

 

  • Application as permanent material for optical application (e.g. lenses, wave guides …), in micro fluidics

Functional materials for inkjet-printing

Special designed functional materials from the product groups Hybrid Polymers, Photoresists, and Nanoimprint Polymers for the deposition and alternative patterning using inkjet printing process

  • Available in different viscosities (adjustable)
  • Suitable in commercial inkjet printing devices
  • Focused on high reliability of droplet generation
  • UV-curable formulations

 

  • Usable as a permanent material for optical application (e.g. lenses, wave guides, optical couplers, diffractive elements, …)
  • Packaging material in the micro electronic
  • Deposition / patterning on substrates with surface topography
  • Imprint material for nano-structuring with high dose accuracy

Nanoimprint Resists

Nanoimprint Lithography (NIL) is a straight forward, low cost, and high throughput capable technology for the fabrication of nanometer scaled patterns. Main application fields are photonics, next generation electronics, as well as bio- and sensor applications.

micro resist technology GmbH has provided tailor-made resist formulations for nanoimprint lithography (NIL) since 1999. The unique key features of our products are outstanding film forming and imprinting performance beside excellent pattern fidelity and plasma etch stability. Besides our highly innovative material developments in close contact to industrial needs, our strength is the ability to adjust our materials in film thickness as well as addressing certain needs of the specific use cases within the formulation. Our nanoimprint resists are mostly applied as an etch mask for pattern transfer into various substrates, like Si, SiO2, Al or sapphire.

Our portfolio covers materials for the classical thermal NIL (T-NIL), in which a thermoplastic polymer is used, as well as UV-NIL, in which a liquid formulation is photo crosslinked upon photo exposure. With our technological expertise and know-how we are able to find the right material for your process and applications. Please contact us for your technical support!

Hybrid Polymers

micro resist technology offers a broad portfolio of UV-curable hybrid polymer products for micro-optical applications. Their excellent optical transparency and high thermal stability makes them perfectly suitable for the production of polymer-based optical components and waveguides. The main fields of application are micro lenses, diffractive optical elements (DOE), gratings, and single-mode or multi-mode waveguides.

OrmoComp®: DE 30 210 075 433; IR 1 091 982 ; TW 100030626; OrmoClear®: DE 30 210 075 434; IR 1 091 359 ; TW 100030628; OrmoStamp®: DE 30 210 075 435; IR 1 092 621 ; TW 100030629; OrmoPrime®: DE 30 210 075 436

Positive Photoresists

Positive Photoresists for UV lithography (mask aligner, laser, greyscale exposure) and e-beam lithography

  • Variety of viscosities for 0.1 µm – 60 µm film thickness in one spin-coating step
  • Effective for broadband, g-line, h-line or i-line exposure, laser direct writing at 350…450 nm and e-beam lithography
  • No post exposure bake
  • Easy removal
     
  • For pattern transfer: Etch mask, mould for electroplating, mould for UV moulding
  • Use in microsystems technology, microelectronics, micro-optics – manufacture of e.g. MEMS, LEDs, ICs, MOEMS, fiber optics telecommunications devices, flat panel displays

Negative Photoresists

Photoresists for UV (mask aligner, laser)/ DUV and e-beam lithography

  • Effective for broadband and i-line, Deep UV, e-beam exposure, or laser direct writing @ 405 nm
  • Lift-off resists with tunable pattern profile, high temperature stability up to 160 °C
  • Variety of viscosities for different film thicknesses in one spin-coating step
     
  • For pattern transfer: Physical vapour deposition (PVD) and single  layer lift-off, etch mask, mould for electroplating
  • For permanent applications: Polymeric waveguides
  • Use in microsystems technology, microelectronics, micro-optics  – manufacture of e.g. LEDs, ICs, MEMS, flat panel displays, fiber optics telecommunications devices